검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Manufacturability of high power ultraviolet-C light emitting diodes on bulk aluminum nitride substrates Grandusky JR, Zhong ZB, Chen J, Leung C, Schowalter LJ Solid-State Electronics, 78, 127, 2012 |
| 2 |
Characterization of nanometer scale compositionally inhomogeneous AlGaN active regions on bulk AlN substrates Sampath AV, Garrett GA, Readinger ED, Enck RW, Shen H, Wraback M, Grandusky JR, Schowalter LJ Solid-State Electronics, 54(10), 1130, 2010 |
| 3 |
Pseudomorphic growth of thick n-type AlxGa1-xN layers on low-defect-density bulk AlN substrates for UV LED applications Grandusky JR, Smart JA, Mendrick MC, Schowalter LJ, Chen KX, Schubert EF Journal of Crystal Growth, 311(10), 2864, 2009 |
| 4 |
Homoepitaxial growth and electrical characterization of GaN-based Schottky and light-emitting diodes Cao XA, Lu H, Kaminsky EB, Arthur SD, Grandusky JR, Shahedipour-Sandvik F Journal of Crystal Growth, 300(2), 382, 2007 |
| 5 |
Identification of subsurface damage in freestanding HVPE GaN substrates and its influence on epitaxial growth of GaN epilayers Grandusky JR, Jindal V, Tripathi N, Shahedipour-Sandvik F, Lu H, Kaminsky EB, Melkote R Journal of Crystal Growth, 307(2), 309, 2007 |
| 6 |
Identification of important growth parameters for the development of high quality Alx > 0.5Ga1-xN grown by metal organic chemical vapor deposition Grandusky JR, Jamil M, Jindal V, Tripathi N, Shahedipour-Sandvik F Journal of Vacuum Science & Technology A, 25(3), 441, 2007 |
| 7 |
Optimization of the active region of InGaN/GaN 405 nm light emitting diodes using statistical design of experiments for determination of interaction effects Grandusky JR, Jamil M, Shahedipour-Sandvik F, DeLuca JA, LeBoeuf SF, Cao XA, Arthur SD Journal of Vacuum Science & Technology B, 23(4), 1576, 2005 |