검색결과 : 25건
| No. | Article |
|---|---|
| 1 |
AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900-1200 degrees C temperature range Tamariz S, Martin D, Grandjean N Journal of Crystal Growth, 476, 58, 2017 |
| 2 |
Critical impact of Ehrlich-Schwobel barrier on GaN surface morphology during homoepitaxial growth Kaufmann NAK, Lahourcade L, Hourahine B, Martin D, Grandjean N Journal of Crystal Growth, 433, 36, 2016 |
| 3 |
Optical, structural, and morphological characterisation of epitaxial ZnO films grown by pulsed-laser deposition Mosca M, Macaluso R, Cali C, Butte R, Nicolay S, Feltin E, Martin D, Grandjean N Thin Solid Films, 539, 55, 2013 |
| 4 |
Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN-GaN metal oxide semiconductor high electron mobility transistors on Si substrates Alexewicz A, Ostermaier C, Henkel C, Bethge O, Carlin JF, Lugani L, Grandjean N, Bertagnolli E, Pogany D, Strasser G Thin Solid Films, 520(19), 6230, 2012 |
| 5 |
Defects in a-GaN grown on r-sapphire by hydride vapor phase epitaxy Dasilva YAR, Zhu T, Martin D, Grandjean N, Jahn U, Stadelmann P Journal of Crystal Growth, 327(1), 6, 2011 |
| 6 |
Sputtering of (001) AlN thin films: Control of polarity by a seed layer Milyutin E, Harada S, Martin D, Carlin JF, Grandjean N, Savu V, Vaszquez-Mena O, Brugger J, Muralt P Journal of Vacuum Science & Technology B, 28(6), L61, 2010 |
| 7 |
GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy Dussaigne A, Malinverni M, Martin D, Castiglia A, Grandjean N Journal of Crystal Growth, 311(21), 4539, 2009 |
| 8 |
InAIN/GaN metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases Cico K, Kuzmik J, Liday J, Husekova K, Pozzovivo G, Carlin JF, Grandjean N, Pogany D, Vogrincic P, Frohlich K Journal of Vacuum Science & Technology B, 27(1), 218, 2009 |
| 9 |
Strain relaxation of AlN epilayers Stranski-Krastanov GaN/AlN quantum dots grown by organic vapor phase epitaxy Simeonov D, Feltin E, Demangeot K, Pinquier C, Carlin JF, Butte R, Frandon J, Grandjean N Journal of Crystal Growth, 299(2), 254, 2007 |
| 10 |
a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy Zhu T, Martin D, Butte R, Napierala J, Grandjean N Journal of Crystal Growth, 300(1), 186, 2007 |