검색결과 : 9건
No. | Article |
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1 |
Novel Schiff base (DBDDP) selective detection of Fe (III): Dispersed in aqueous solution and encapsulated in silica cross-linked micellar nanoparticles in living cell Gai FY, Yin L, Fan MM, Li L, Grahn J, Ao YH, Yang XD, Wu XM, Liu YL, Huo QS Journal of Colloid and Interface Science, 514, 357, 2018 |
2 |
Phonon black-body radiation limit for heat dissipation in electronics Schleeh J, Mateos J, Iniguez-de-la-Torre I, Wadefalk N, Nilsson PA, Grahn J, Minnich AJ Nature Materials, 14(2), 187, 2015 |
3 |
Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors Westlund A, Sangare P, Ducournau G, Iniguez-de-la-Torre I, Nilsson PA, Gaquiere C, Desplanque L, Wallart X, Millithaler JF, Gonzalez T, Mateos J, Grahn J Solid-State Electronics, 104, 79, 2015 |
4 |
Cryogenic noise performance of InGaAs/InAlAs HEMTs grown on InP and GaAs substrate Schleeh J, Rodilla H, Wadefalk N, Nilsson PA, Grahn J Solid-State Electronics, 91, 74, 2014 |
5 |
True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications Moschetti G, Abbasi M, Nilsson PA, Hallen A, Desplanque L, Wallart X, Grahn J Solid-State Electronics, 79, 268, 2013 |
6 |
DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation Moschetti G, Lefebvre E, Fagerlind M, Nilsson PA, Desplanque L, Wallart X, Grahn J Solid-State Electronics, 87, 85, 2013 |
7 |
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation Moschetti G, Wadefalk N, Nilsson PA, Roelens Y, Noudeviwa A, Desplanque L, Wallart X, Danneville F, Dambrine G, Bollaert S, Grahn J Solid-State Electronics, 64(1), 47, 2011 |
8 |
Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain Borg M, Lefebvre E, Malmkvist M, Desplanque L, Wallart X, Roelens Y, Dambrine G, Cappy A, Bollaert S, Grahn J Solid-State Electronics, 52(5), 775, 2008 |
9 |
Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As-In0.40Al0.60As-InPHEMT MMIC technology Malmkvist M, Mellberg A, Rorsman N, Zirath H, Grahn J Solid-State Electronics, 50(5), 858, 2006 |