화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Novel Schiff base (DBDDP) selective detection of Fe (III): Dispersed in aqueous solution and encapsulated in silica cross-linked micellar nanoparticles in living cell
Gai FY, Yin L, Fan MM, Li L, Grahn J, Ao YH, Yang XD, Wu XM, Liu YL, Huo QS
Journal of Colloid and Interface Science, 514, 357, 2018
2 Phonon black-body radiation limit for heat dissipation in electronics
Schleeh J, Mateos J, Iniguez-de-la-Torre I, Wadefalk N, Nilsson PA, Grahn J, Minnich AJ
Nature Materials, 14(2), 187, 2015
3 Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
Westlund A, Sangare P, Ducournau G, Iniguez-de-la-Torre I, Nilsson PA, Gaquiere C, Desplanque L, Wallart X, Millithaler JF, Gonzalez T, Mateos J, Grahn J
Solid-State Electronics, 104, 79, 2015
4 Cryogenic noise performance of InGaAs/InAlAs HEMTs grown on InP and GaAs substrate
Schleeh J, Rodilla H, Wadefalk N, Nilsson PA, Grahn J
Solid-State Electronics, 91, 74, 2014
5 True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications
Moschetti G, Abbasi M, Nilsson PA, Hallen A, Desplanque L, Wallart X, Grahn J
Solid-State Electronics, 79, 268, 2013
6 DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation
Moschetti G, Lefebvre E, Fagerlind M, Nilsson PA, Desplanque L, Wallart X, Grahn J
Solid-State Electronics, 87, 85, 2013
7 InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
Moschetti G, Wadefalk N, Nilsson PA, Roelens Y, Noudeviwa A, Desplanque L, Wallart X, Danneville F, Dambrine G, Bollaert S, Grahn J
Solid-State Electronics, 64(1), 47, 2011
8 Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain
Borg M, Lefebvre E, Malmkvist M, Desplanque L, Wallart X, Roelens Y, Dambrine G, Cappy A, Bollaert S, Grahn J
Solid-State Electronics, 52(5), 775, 2008
9 Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As-In0.40Al0.60As-InPHEMT MMIC technology
Malmkvist M, Mellberg A, Rorsman N, Zirath H, Grahn J
Solid-State Electronics, 50(5), 858, 2006