검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm Najmzadeh M, Berthome M, Sallese JM, Grabinski W, Ionescu AM Solid-State Electronics, 98, 55, 2014 |
| 2 |
Accumulation-mode gate-all-around si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain Najmzadeh M, Bouvet D, Grabinski W, Sallese JM, Ionescu AM Solid-State Electronics, 74, 114, 2012 |