검색결과 : 6건
No. | Article |
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1 |
Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology Fenouillet-Beranger C, Perreau P, Benoist T, Richier C, Haendler S, Pradelle J, Bustos J, Brun P, Tosti L, Weber O, Andrieu F, Orlando B, Pellissier-Tanon D, Abbate F, Richard C, Beneyton R, Gregoire M, Ducote J, Gouraud P, Margain A, Borowiak C, Bianchini R, Planes N, Gourvest E, Bourdelle KK, Nguyen BY, Poiroux T, Skotnicki T, Faynot O, Boeuf F Solid-State Electronics, 88, 15, 2013 |
2 |
Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances Ben Akkez I, Fenouillet-Beranger C, Cros A, Perreau P, Haendler S, Weber O, Andrieu F, Pellissier-Tanon D, Abbate F, Richard C, Beneyton R, Gouraud P, Margain A, Borowiak C, Gourvest E, Bourdelle KK, Nguyen BY, Poiroux T, Skotnicki T, Faynot O, Balestra F, Ghibaudo G, Boeuf F Solid-State Electronics, 90, 143, 2013 |
3 |
Impact of Oxidation on Ge2Sb2Te5 and GeTe Phase-Change Properties Gourvest E, Pelissier B, Vallee C, Roule A, Lhostis S, Maitrejean S Journal of the Electrochemical Society, 159(4), H373, 2012 |
4 |
Carbon-doped GeTe: A promising material for Phase-Change Memories Beneventi GB, Perniola L, Sousa V, Gourvest E, Maitrejean S, Bastien JC, Bastard A, Hyot B, Fargeix A, Jahan C, Nodin JF, Persico A, Fantini A, Blachier D, Toffoli A, Loubriat S, Roule A, Lhostis S, Feldis H, Reimbold G, Billon T, De Salvo B, Larcher L, Pavan P, Bensahel D, Mazoyer P, Annunziata R, Zuliani P, Boulanger F Solid-State Electronics, 65-66, 197, 2011 |
5 |
Combined spectroscopic ellipsometry and attenuated total reflection analyses of Al2O3/HfO2 nanolaminates Bonvalot M, Kahn M, Vallee C, Gourvest E, Abed H, Jorel C, Dubourdieu C Thin Solid Films, 518(18), 5057, 2010 |
6 |
Physicochemical and electrical characterizations of atomic layer deposition grown HfO2 on TiN and Pt for metal-insulator-metal application Jorel C, Vallee C, Gourvest E, Pelissier B, Kahn M, Bonvalot M, Gonon P Journal of Vacuum Science & Technology B, 27(1), 378, 2009 |