화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology
Fenouillet-Beranger C, Perreau P, Benoist T, Richier C, Haendler S, Pradelle J, Bustos J, Brun P, Tosti L, Weber O, Andrieu F, Orlando B, Pellissier-Tanon D, Abbate F, Richard C, Beneyton R, Gregoire M, Ducote J, Gouraud P, Margain A, Borowiak C, Bianchini R, Planes N, Gourvest E, Bourdelle KK, Nguyen BY, Poiroux T, Skotnicki T, Faynot O, Boeuf F
Solid-State Electronics, 88, 15, 2013
2 Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances
Ben Akkez I, Fenouillet-Beranger C, Cros A, Perreau P, Haendler S, Weber O, Andrieu F, Pellissier-Tanon D, Abbate F, Richard C, Beneyton R, Gouraud P, Margain A, Borowiak C, Gourvest E, Bourdelle KK, Nguyen BY, Poiroux T, Skotnicki T, Faynot O, Balestra F, Ghibaudo G, Boeuf F
Solid-State Electronics, 90, 143, 2013
3 Impact of Oxidation on Ge2Sb2Te5 and GeTe Phase-Change Properties
Gourvest E, Pelissier B, Vallee C, Roule A, Lhostis S, Maitrejean S
Journal of the Electrochemical Society, 159(4), H373, 2012
4 Carbon-doped GeTe: A promising material for Phase-Change Memories
Beneventi GB, Perniola L, Sousa V, Gourvest E, Maitrejean S, Bastien JC, Bastard A, Hyot B, Fargeix A, Jahan C, Nodin JF, Persico A, Fantini A, Blachier D, Toffoli A, Loubriat S, Roule A, Lhostis S, Feldis H, Reimbold G, Billon T, De Salvo B, Larcher L, Pavan P, Bensahel D, Mazoyer P, Annunziata R, Zuliani P, Boulanger F
Solid-State Electronics, 65-66, 197, 2011
5 Combined spectroscopic ellipsometry and attenuated total reflection analyses of Al2O3/HfO2 nanolaminates
Bonvalot M, Kahn M, Vallee C, Gourvest E, Abed H, Jorel C, Dubourdieu C
Thin Solid Films, 518(18), 5057, 2010
6 Physicochemical and electrical characterizations of atomic layer deposition grown HfO2 on TiN and Pt for metal-insulator-metal application
Jorel C, Vallee C, Gourvest E, Pelissier B, Kahn M, Bonvalot M, Gonon P
Journal of Vacuum Science & Technology B, 27(1), 378, 2009