검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Characterization of high quality InN grown on production-style plasma assisted molecular beam epitaxy system Gherasoiu I, O'Steen M, Bird T, Gotthold D, Chandolu A, Song DY, Xu SX, Holtz M, Nikishin SA, Schaff WJ Journal of Vacuum Science & Technology A, 26(3), 399, 2008 |
| 2 |
Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors Mazaev KM, Lobanova AV, Yakovlev EV, Talalaev RA, Galyukov AO, Makarov YN, Gotthold D, Albert B, Kadinski L, Peres B Journal of Crystal Growth, 261(2-3), 190, 2004 |
| 3 |
Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors Lobanova A, Mazaev K, Yakovlev E, Talalaev R, Galyukov A, Makarov Y, Gotthold D, Albert B, Kadinski L, Peres B Journal of Crystal Growth, 266(1-3), 354, 2004 |
| 4 |
Construction of a variable aperture cell for source flux control in a molecular-beam epitaxy environment Mattord TJ, Oye MM, Gotthold D, Hansing C, Holmes AL, Streetman BG Journal of Vacuum Science & Technology A, 22(3), 735, 2004 |
| 5 |
Small signal measurement of SC2O3AlGaN/GaN moshemts Luo B, Mehandru R, Kang BS, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch R, Gillespie JK, Jenkins T, Sewell J, Via D, Crespo A Solid-State Electronics, 48(2), 355, 2004 |
| 6 |
Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation Luo B, Mehandru R, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch RC, Moser N, Gillespie JK, Jessen GH, Jenkins TJ, Yannuzi MJ, Via GD, Crespo A Solid-State Electronics, 47(10), 1781, 2003 |
| 7 |
Molecular-beam epitaxy growth of Ga(In)NAs/GaAs heterostructures for photodiodes Gotthold D, Govindaraju S, Reifsnider J, Kinsey G, Campbell J, Holmes A Journal of Vacuum Science & Technology B, 19(4), 1400, 2001 |