화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 FTIR exhaust gas analysis of GaN pseudo-halide vapor phase growth
Kachel K, Siche D, Golka S, Sennikov P, Bickermann M
Materials Chemistry and Physics, 177, 12, 2016
2 SiC seed polarity-dependent bulk AlN growth under the influence of residual oxygen
Hartmann C, Albrecht M, Wollweber J, Schuppang J, Juda U, Guguschev C, Golka S, Dittmar A, Fornari R
Journal of Crystal Growth, 344(1), 19, 2012
3 Growth of bulk AlN single crystals with low oxygen content taking into account thermal and kinetic effects of oxygen-related gaseous species
Guguschev C, Dittmar A, Moukhina E, Hartmann C, Golka S, Wollweber J, Bickermann M, Fornari R
Journal of Crystal Growth, 360, 185, 2012
4 In situ kinetic investigations during aluminium nitride purification and crystal growth processes by capillary coupled mass spectrometry
Guguschev C, Moukhina E, Wollweber J, Dittmar A, Bottcher K, Hartmann C, Golka S, Fornari R
Thermochimica Acta, 526(1-2), 213, 2011
5 Time-multiplexed, inductively coupled plasma process with separate SiCl4 and O-2 steps for etching of GaAs with high selectivity
Golka S, Arens M, Reetz M, Kwapien T, Bouchoule S, Patriarche G
Journal of Vacuum Science & Technology B, 27(5), 2270, 2009
6 Low bias reactive ion etching of GaAs with a SiCl4/N-2/O-2 time-multiplexed process
Golka S, Schartner S, Schrenk W, Strasser G
Journal of Vacuum Science & Technology B, 25(3), 839, 2007
7 Calibrated scanning capacitance microscopy investigations on p-doped Si multilayers
Basnar B, Golka S, Gornik E, Harasek S, Bertagnolli E, Schatzmayr M, Smoliner J
Journal of Vacuum Science & Technology B, 19(5), 1808, 2001