검색결과 : 4건
No. | Article |
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1 |
Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures Van den Berg JA, Armour DG, Zhang S, Whelan S, Ohno H, Wang TS, Cullis AG, Collart EHJ, Goldberg RD, Bailey P, Noakes TCQ Journal of Vacuum Science & Technology B, 20(3), 974, 2002 |
2 |
Cluster formation during annealing of ultra-low-energy boron-implanted silicon Collart EJH, Murrell AJ, Foad MA, van den Berg JA, Zhang S, Armour D, Goldberg RD, Wang TS, Cullis AG Journal of Vacuum Science & Technology B, 18(1), 435, 2000 |
3 |
Lateral selectivity of ion-induced quantum well intermixing Haysom JE, Poole PJ, Feng Y, Koteles ES, He JJ, Charbonneau S, Goldberg RD, Mitchell IV Journal of Vacuum Science & Technology A, 16(2), 817, 1998 |
4 |
Reduced 980 nm laser facet absorption by band gap shifted extended cavities Piva PG, Goldberg RD, Mitchell IV, Fafard S, Dion M, Buchanan M, Charbonneau S, Hillier G, Miner C Journal of Vacuum Science & Technology B, 16(4), 1790, 1998 |