화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures
Van den Berg JA, Armour DG, Zhang S, Whelan S, Ohno H, Wang TS, Cullis AG, Collart EHJ, Goldberg RD, Bailey P, Noakes TCQ
Journal of Vacuum Science & Technology B, 20(3), 974, 2002
2 Cluster formation during annealing of ultra-low-energy boron-implanted silicon
Collart EJH, Murrell AJ, Foad MA, van den Berg JA, Zhang S, Armour D, Goldberg RD, Wang TS, Cullis AG
Journal of Vacuum Science & Technology B, 18(1), 435, 2000
3 Lateral selectivity of ion-induced quantum well intermixing
Haysom JE, Poole PJ, Feng Y, Koteles ES, He JJ, Charbonneau S, Goldberg RD, Mitchell IV
Journal of Vacuum Science & Technology A, 16(2), 817, 1998
4 Reduced 980 nm laser facet absorption by band gap shifted extended cavities
Piva PG, Goldberg RD, Mitchell IV, Fafard S, Dion M, Buchanan M, Charbonneau S, Hillier G, Miner C
Journal of Vacuum Science & Technology B, 16(4), 1790, 1998