검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Comparison of scanning capacitance microscopy measurements in open and closed loop modes on highly doped silicon monolayers Goghero D, Gautier B, Descamps A, Bremond G, Faucher M, Mariolle D, Bertin F Solid-State Electronics, 50(9-10), 1479, 2006 |
| 2 |
Structural and electrical properties of SiO2 films deposited on Si substrates from tetraethoxysilane/oxygen plasmas Goghero D, Goullet A, Landesman JP Solid-State Electronics, 49(3), 369, 2005 |
| 3 |
Effect of the ion bombardment energy on silicon dioxide films deposited from oxygen/tetraethoxysilane plasmas in a helicon reactor Goghero D, Goullet A, Borvon G, Turban G Thin Solid Films, 471(1-2), 123, 2005 |
| 4 |
Investigation of two-dimensional diffusion of the self-interstitials in crystalline silicon at 800 degrees C and at room temperature Giannazzo F, Mirabella S, Priolo F, Goghero D, Raineri V Journal of Vacuum Science & Technology B, 22(1), 369, 2004 |
| 5 |
Assessing the performance of two-dimensional dopant profiling techniques Duhayon N, Eyber P, Fouchier M, Clarysee T, Vandervorst W, Alvarez D, Schoemann S, Ciappa M, Stangoni M, Fichtner W, Formanek P, Kittler M, Raineri V, Giannazzo F, Goghero D, Rosenwaks Y, Shikler R, Saraf S, Sadewasser S, Barreau N, Glatzel T, Verheijen M, Mentink SAM, von Sprekelsen M, Maltezopoulos T, Wiesendanger R, Hellemans L Journal of Vacuum Science & Technology B, 22(1), 385, 2004 |
| 6 |
Simulation of scanning capacitance microscopy measurements on ultranarrow doping profiles in silicon Giannazzo F, Goghero D, Raineri V, Mirabella S, Priolo F, Liotta SF, Rinaudo S Journal of Vacuum Science & Technology B, 22(1), 394, 2004 |
| 7 |
Experimental aspects and modeling for quantitative measurements in scanning capacitance microscopy Giannazzo F, Goghero D, Raineri V Journal of Vacuum Science & Technology B, 22(5), 2391, 2004 |
| 8 |
Evaluation of the ion bombardment energy on silicon dioxide films deposited from O-2/TEOS plasmas on Si and unstrained Si0.83Ge0.17/Si substrates Goghero D, Goullet A, Lebrizoual L, Meyer F, Turban G Journal of Vacuum Science & Technology B, 20(6), 2281, 2002 |
| 9 |
Activation study of implanted N+ in 6H-SiC by scanning capacitance microscopy Raineri V, Calcagno L, Giannazzo F, Goghero D, Musumeci F, Roccaforte F, La Via F Materials Science Forum, 433-4, 375, 2002 |