검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
GaAs (111) epilayers grown by MBE on Ge (111): Twin reduction and polarity Pelati D, Patriarche G, Mauguin O, Largeau L, Travers L, Brisset F, Glas F, Oehler F Journal of Crystal Growth, 519, 84, 2019 |
| 2 |
GaP/GaAs1-xPx nanowires fabricated with modulated fluxes: A step towards the realization of superlattices in a single nanowire Jabeen F, Patriarche G, Glas F, Harmand JC Journal of Crystal Growth, 323(1), 293, 2011 |
| 3 |
GaAs nanowires formed by Au-assisted molecular beam epitaxy: Effect of growth temperature Harmand JC, Tchernycheva M, Patriarche G, Travers L, Glas F, Cirlin G Journal of Crystal Growth, 301, 853, 2007 |
| 4 |
Elastic relaxation of isolated and interacting truncated pyramidal quantum dots and quantum wires in a half space Glas F Applied Surface Science, 188(1-2), 9, 2002 |
| 5 |
GaAs/GaAs twist-bonding for compliant substrates: interface structure and epitaxial growth Patriarche G, Meriadec C, LeRoux G, Deparis C, Sagnes I, Harmand JC, Glas F Applied Surface Science, 164, 15, 2000 |
| 6 |
TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures Patriarche G, Glas F, Le Roux G, Largeau L, Mereuta A, Ougazzaden A, Benchimol JL Journal of Crystal Growth, 221, 12, 2000 |