검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Conductive filament structure in HfO2 resistive switching memory devices Privitera S, Bersuker G, Lombardo S, Bongiorno C, Gilmer DC Solid-State Electronics, 111, 161, 2015 |
| 2 |
Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament Balatti S, Larentis S, Gilmer DC, Ielmini D Advanced Materials, 25(10), 1474, 2013 |
| 3 |
Properties of oxide film atomic layer deposited from tetraethoxy silane, hafnium halides, and water Kukli K, Ritala M, Leskela M, Sajavaara T, Keinonen J, Hegde RI, Gilmer DC, Tobin PJ Journal of the Electrochemical Society, 151(5), F98, 2004 |
| 4 |
Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics Schaeffer JK, Samavedam SB, Gilmer DC, Dhandapani V, Tobin PJ, Mogab J, Nguyen BY, White BE, Dakshina-Murthy S, Rai RS, Jiang ZX, Martin R, Raymond MV, Zavala M, La LB, Smith JA, Garcia R, Roan D, Kottke M, Gregory RB Journal of Vacuum Science & Technology B, 21(1), 11, 2003 |
| 5 |
Does chemistry really matter in the chemical vapor deposition of titanium dioxide? Precursor and kinetic effects on the microstructure of polycrystalline films Taylor CJ, Gilmer DC, Colombo DG, Wilk GD, Campbell SA, Roberts J, Gladfelter WL Journal of the American Chemical Society, 121(22), 5220, 1999 |
| 6 |
Structural and Electrical Characterization of TiO2 Grown from Titanium Tetrakis-Isopropoxide (Ttip) and Ttip/H2O Ambients Yan J, Gilmer DC, Campbell SA, Gladfelter WL, Schmid PG Journal of Vacuum Science & Technology B, 14(3), 1706, 1996 |