화학공학소재연구정보센터
검색결과 : 52건
No. Article
1 Copper ion transport induced dielectric failure: Inclusion of elastic drift and consequences for reliability (vol 26, pg 1497, 2008)
Achanta RS, Plawsky JL, Gill WN
Journal of Vacuum Science & Technology A, 27(1), 165, 2009
2 The effect of metallic barriers in inhibiting copper ion transport in low-k dielectrics: Implications for time-to-failure
Achanta RS, Plawsky JL, Gill WN, Kim YH
Thin Solid Films, 517(19), 5630, 2009
3 Copper ion transport induced dielectric failure: Inclusion of elastic drift and consequences for reliability
Achanta RS, Plawsky JL, Gill WN
Journal of Vacuum Science & Technology A, 26(6), 1497, 2008
4 Design of diffusion barriers
Gill WN, Plawsky JL
Thin Solid Films, 515(11), 4794, 2007
5 Fabrication of ultrathin (similar to 100 nm), low-index nanoporous silica films for photonic devices: Role of substrate adhesion on the film thickness
Ojha M, Gill WN, Plawsky JL, Cho W
Journal of Vacuum Science & Technology B, 24(3), 1109, 2006
6 Role of reactive surface oxygen in causing enhanced copper ionization in a low-k polymer
Achanta RS, Gill WN, Plawsky JL, Haase G
Journal of Vacuum Science & Technology B, 24(3), 1417, 2006
7 Diffusion of copper in nanoporous dielectric films
Rodriguez O, Saxena R, Cho WJ, Plawsky JL, Gill WN
Industrial & Engineering Chemistry Research, 44(5), 1220, 2005
8 A model for the etching of nanoporous silica in C4F8 plasmas based on pore geometry and porosity effects
Cho WJ, Rodriguez O, Saxena R, Ojha M, Chanta RA, Plawsky JL, Gill WN
Journal of the Electrochemical Society, 152(2), F26, 2005
9 Polymer penetration and pore sealing in nanoporous silica by CHF3 plasma exposure
Cho WJ, Saxena R, Rodriguez O, Ojha M, Achanta R, Plawsky JL, Gill WN
Journal of the Electrochemical Society, 152(6), F61, 2005
10 A feature scale model for chemical mechanical planarization of damascene structures
Saxena R, Thakurta DG, Gutmann RJ, Gill WN
Thin Solid Films, 449(1-2), 192, 2004