화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Properties of Zn3N2-doped ZnO films deposited by pulsed laser deposition
Erie JM, Li Y, Ivill M, Kim HS, Pearton SJ, Gila B, Norton DP, Ren F
Applied Surface Science, 254(18), 5941, 2008
2 Effect of oxygen co-doping on the electronic and magnetic properties of Ga(1-x)MnxN
Thaler G, Frazier R, Gila B, Stapleton J, Davies R, Abernathy CR, Pearton SJ
Electrochemical and Solid State Letters, 8(1), G20, 2005
3 Detection of C2H4 using wide-bandgap semiconductor sensors AlGaN/GaN MOS diodes and bulk ZnO Schottky rectifiers
Kang BS, Kim S, Ren F, Ip K, Heo YW, Gila B, Abernathy CR, Norton DP, Pearton SJ
Journal of the Electrochemical Society, 151(7), G468, 2004
4 GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates
LaRoche JR, Luo B, Ren F, Baik KH, Stodilka D, Gila B, Abernathy CR, Pearton SJ, Usikov A, Tsvetkov D, Soukhoveev V, Gainer G, Rechnikov A, Dimitriev V, Chen GT, Pan CC, Chyi JI
Solid-State Electronics, 48(1), 193, 2004
5 Electrical characterization of GaN metal oxide semiconductor diodes using MgO as the gate oxide
Kim J, Gila B, Mehandru R, Johnson JW, Shin JH, Lee KP, Luo B, Onstine A, Abernathy CR, Pearton SJ, Ren F
Journal of the Electrochemical Society, 149(8), G482, 2002
6 Surface chemical treatment for the cleaning of AlN and GaN surfaces
Lee KN, Donovan SM, Gila B, Overberg M, Mackenzie JD, Abernathy CR, Wilson RG
Journal of the Electrochemical Society, 147(8), 3087, 2000
7 Growth and characterization of GaTlAs
Antonell MJ, Gila B, Powers K, Abernathy CR
Journal of Vacuum Science & Technology A, 18(5), 2448, 2000