검색결과 : 19건
| No. | Article |
|---|---|
| 1 |
The controlled growth of GaN microrods on Si(111) substrates by MOCVD Foltynski B, Garro N, Vallo M, Finken M, Giesen C, Kalisch H, Vescan A, Cantarero A, Heuken M Journal of Crystal Growth, 414, 200, 2015 |
| 2 |
MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers Tuna O, Hahn H, Kalisch H, Giesen C, Vescan A, Rzheutski MV, Pavlovskii VN, Lutsenko EV, Yablonskii GP, Heuken M Journal of Crystal Growth, 370, 2, 2013 |
| 3 |
Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation Alexewicz A, Alomari M, Maier D, Behmenburg H, Giesen C, Heuken M, Pogany D, Kohn E, Strasser G Solid-State Electronics, 89, 207, 2013 |
| 4 |
Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers Tuna O, Linhart WM, Lutsenko EV, Rzheutski MV, Yablonskii GP, Veal TD, McConville CF, Giesen C, Kalisch H, Vescan A, Heuken M Journal of Crystal Growth, 358, 51, 2012 |
| 5 |
Metal requirements of low-carbon power generation Kleijn R, van der Voet E, Kramer GJ, van Oers L, van der Giesen C Energy, 36(9), 5640, 2011 |
| 6 |
Investigation of AlN buffer layers on 6H-SiC for AlInN HEMTs grown by MOVPE Behmenburg H, Giesen C, Srnanek R, Kovac J, Kalisch H, Heuken M, Jansen RH Journal of Crystal Growth, 316(1), 42, 2011 |
| 7 |
Growth of InN films and nanostructures by MOVPE Briot O, Ruffenach S, Moret M, Gil B, Giesen C, Heuken M, Rushworth S, Leese T, Succi M Journal of Crystal Growth, 311(10), 2761, 2009 |
| 8 |
MOVPE growth of InN buffer layers on sapphire Briot O, Ruffenach S, Moret M, Gil B, Giesen C, Heuken M, Rushworth S, Leese T, Succi M Journal of Crystal Growth, 311(10), 2787, 2009 |
| 9 |
Alternative precursors for MOVPE growth of InN and GaN at low temperature Ruffenach S, Moret M, Briot O, Gil B, Giesen C, Heuken M, Rushworth S, Leese T, Succi M Journal of Crystal Growth, 311(10), 2791, 2009 |
| 10 |
Optical, structural investigations and band-gap bowing parameter of GaInN alloys Moret M, Gil B, Ruffenach S, Briot O, Giesen C, Heuken M, Rushworth S, Leese T, Succi M Journal of Crystal Growth, 311(10), 2795, 2009 |