검색결과 : 1건
No. | Article |
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1 |
SiO2 interfacial layer as the origin of the breakdown of high-k dielectrics stacks Rafik M, Ribes G, Roy D, Ghibaudd G Journal of Vacuum Science & Technology B, 27(1), 472, 2009 |
No. | Article |
---|---|
1 |
SiO2 interfacial layer as the origin of the breakdown of high-k dielectrics stacks Rafik M, Ribes G, Roy D, Ghibaudd G Journal of Vacuum Science & Technology B, 27(1), 472, 2009 |