검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
InGaN pn-junctions grown by PA-MBE: Material characterization and fabrication of nanocolumn electroluminescent devices Gherasoiu I, Yu KM, Reichertz L, Walukiewicz W Journal of Crystal Growth, 425, 393, 2015 |
| 2 |
Characterization of high quality InN grown on production-style plasma assisted molecular beam epitaxy system Gherasoiu I, O'Steen M, Bird T, Gotthold D, Chandolu A, Song DY, Xu SX, Holtz M, Nikishin SA, Schaff WJ Journal of Vacuum Science & Technology A, 26(3), 399, 2008 |
| 3 |
Gas source molecular beam epitaxy of high quality AlxGa1-xN (0 <= x <= 1) on Si(111) Nikishin S, Kipshidze G, Kuryatkov V, Choi K, Gherasoiu I, de Peralta LG, Zubrilov A, Tretyakov V, Copeland K, Prokofyeva T, Holtz M, Asomoza R, Kudryavtsev Y, Temkin H Journal of Vacuum Science & Technology B, 19(4), 1409, 2001 |