검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Tetracene Ultrathin Film Growth on Hydrogen-Passivated Silicon Niederhausen J, MacQueen RW, Lips K, Aldahhak H, Schmidt WG, Gerstmann U Langmuir, 36(31), 9099, 2020 |
| 2 |
Optically excited structural transition in atomic wires on surfaces at the quantum limit Frigge T, Hafke B, Witte T, Krenzer B, Streubuhr C, Syed AS, Trontl VM, Avigo I, Zhou P, Ligges M, von der Linde D, Bovensiepen U, Horn-von Hoegen M, Wippermann S, Lucke A, Gerstmann U, Schmidt WG Nature, 544(7649), 207, 2017 |
| 3 |
Experimental and Theoretical High-Energy-Resolution X-ray Absorption Spectroscopy: Implications for the Investigation of the Entatic State Vollmers NJ, Muller P, Hoffmann A, Herres-Pawlis S, Rohrmuller M, Schmidt WG, Gerstmann U, Bauer M Inorganic Chemistry, 55(22), 11694, 2016 |
| 4 |
Temperature-Dependent Hole Mobility and Its Limit in Crystal-Phase P3HT Calculated from First Principles Lucke A, Ortmann F, Panhans M, Sanna S, Rauls E, Gerstmann U, Schmidt WG Journal of Physical Chemistry B, 120(24), 5572, 2016 |
| 5 |
Influence of Structural Defects and Oxidation onto Hole Conductivity in P3HT Lucke A, Schmidt WG, Rauls E, Ortmann F, Gerstmann U Journal of Physical Chemistry B, 119(21), 6481, 2015 |
| 6 |
Influence of the growth-surface on the incorporation of phosphorus in SiC Rauls E, Gerstmann U, Frauenheim T Applied Surface Science, 243(1-4), 345, 2005 |
| 7 |
A new model for the D-I-luminescence in 6H-SiC Rauls E, Gerstmann U, Pinheiro MVB, Greulich-Weber S, Spaeth JM Materials Science Forum, 483, 465, 2005 |
| 8 |
The VSiCSi(SiCCSi) complex in electron-irradiated 6H-SiC Pinheiro MVB, Rauls E, Gerstmann U, Greulich-Weber S, Spaeth JM Materials Science Forum, 483, 477, 2005 |
| 9 |
Ab initio calculation of shallow defects: Results for P-related donors in SiC Gerstmann U, Rauls E, Overhof H, Frauenheim T Materials Science Forum, 483, 501, 2005 |
| 10 |
The nature of the shallow boron acceptor in SiC - localization versus effective mass theory Gerstmann U, Gali A, Deak P, Frauenheim T, Overhof H Materials Science Forum, 457-460, 711, 2004 |