화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs
Ding LL, Gnani E, Gerardin S, Bagatin M, Driussi F, Selmi L, Le Royer C, Paccagnella A
Solid-State Electronics, 115, 146, 2016
2 Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs
Rossetto I, Rampazzo F, Gerardin S, Meneghini M, Bagatin M, Zanandrea A, Dua C, di Forte-Poisson MA, Aubry R, Oualli M, Delage SL, Paccagnella A, Meneghesso G, Zanoni E
Solid-State Electronics, 113, 15, 2015
3 Radiation damage on dielectrics: Single event effects
Paccagnella A, Gerardin S, Cellere G
Journal of Vacuum Science & Technology B, 27(1), 406, 2009
4 Implanted and irradiated SiO2/Si structure electrical properties at the nanoscale
Porti M, Nafria N, Gerardin S, Aymerich X, Cester A, Paccagnella A, Ghidini G
Journal of Vacuum Science & Technology B, 27(1), 421, 2009