검색결과 : 4건
No. | Article |
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1 |
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs Ding LL, Gnani E, Gerardin S, Bagatin M, Driussi F, Selmi L, Le Royer C, Paccagnella A Solid-State Electronics, 115, 146, 2016 |
2 |
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs Rossetto I, Rampazzo F, Gerardin S, Meneghini M, Bagatin M, Zanandrea A, Dua C, di Forte-Poisson MA, Aubry R, Oualli M, Delage SL, Paccagnella A, Meneghesso G, Zanoni E Solid-State Electronics, 113, 15, 2015 |
3 |
Radiation damage on dielectrics: Single event effects Paccagnella A, Gerardin S, Cellere G Journal of Vacuum Science & Technology B, 27(1), 406, 2009 |
4 |
Implanted and irradiated SiO2/Si structure electrical properties at the nanoscale Porti M, Nafria N, Gerardin S, Aymerich X, Cester A, Paccagnella A, Ghidini G Journal of Vacuum Science & Technology B, 27(1), 421, 2009 |