화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 A method to analyze the impact of fast-recovering NBTI degradation on the stability of large-scale SRAM arrays
Drapatz S, Hofmann K, Georgakos G, Schmitt-Landsiedel D
Solid-State Electronics, 65-66, 191, 2011
2 Scaling properties of the tunneling field effect transistor (TFET): Device and circuit
Nirschl T, Henzler S, Fischer J, Fulde M, Bargagli-Stoffi A, Sterkel M, Sedlmeir J, Weber C, Heinrich R, Schaper U, Einfeld J, Neubert R, Feldmann U, Stahrenberg K, Ruderer E, Georgakos G, Huber A, Kakoschke R, Hansch W, Schmitt-Landsiedel D
Solid-State Electronics, 50(1), 44, 2006