검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
Understanding and optimizing the floating body retention in FDSOI UTBOX Aoulaiche M, Simoen E, Caillat C, Witters L, Bourdelle KK, Nguyen BY, Martino J, Claeys C, Fazan P, Jurczak M Solid-State Electronics, 117, 123, 2016 |
| 2 |
Room temperature analysis of Ge p(+)/n diodes reverse characteristics fabricated by platinum assisted dopant activation Ioannou-Sougleridis V, Poulakis N, Dimitrakis P, Normand P, Patsis GP, Dimoulas A, Simoen E Solid-State Electronics, 81, 19, 2013 |
| 3 |
Characterization of residual implant damage by generation time technique Jee YJ, Kim CY, Jun CS, Kim TS, Belyaev A, Marinskiy D Solid-State Electronics, 82, 16, 2013 |
| 4 |
Role of the substrate during pseudo-MOSFET drain current transients Park K, Nayak P, Schroder DK Solid-State Electronics, 54(3), 316, 2010 |
| 5 |
High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD Yasutake K, Ohmi H, Kirihata Y, Kakiuchi H Thin Solid Films, 517(1), 242, 2008 |
| 6 |
Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study Slugen V, Harmatha L, Tapaina M, Ballo P, Pisecny P, Sik J, Kogel G, Krsjak V Applied Surface Science, 252(9), 3201, 2006 |
| 7 |
Measurement of generation parameters on Ru/HfO2/Si MOS capacitor Tapajna M, Harmatha L, Husekova K Solid-State Electronics, 50(2), 177, 2006 |
| 8 |
Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient Bera LK, Mathew S, Balasubramanian N, Braithwaite G, Currie MT, Singaporewala F, Yap J, Hammond R, Lochtefeld A, Bulsara MT, Fitzgerald EA Applied Surface Science, 224(1-4), 278, 2004 |
| 9 |
Comparison of charge-retention times in n- and p-type 4H-SiC MOS capacitors as non-volatile memory elements Cheong KY, Dimitrijev S, Han J Journal of Crystal Growth, 268(3-4), 547, 2004 |
| 10 |
Impact of gate tunneling floating-body charging on drain current transients of 0.10 mu m-CMOS partially depleted SOI MOSFETs Rafi JM, Mercha A, Simoen E, Claeys C Solid-State Electronics, 48(7), 1211, 2004 |