검색결과 : 9건
No. | Article |
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1 |
Affected annealing time treatment on preferred orientation and thermoelectric properties of h-GeSbTe0.5 alloy thin film Vora-ud A, Thaowonkaew S, Rittiruam M, Horprathum M, Seetawan T Current Applied Physics, 16(3), 305, 2016 |
2 |
Phase change memory employing a Ti diffusion barrier for reducing reset current Park JH, Kim SW, Kim JH, Ko DH, Wu Z, Ahn JK, Ahn DH, Lee JM, Kang SB, Choi SY Thin Solid Films, 612, 135, 2016 |
3 |
Young's modulus and residual stress of GeSbTe phase-change thin films Nazeer H, Bhaskaran H, Woldering LA, Abelmann L Thin Solid Films, 592, 69, 2015 |
4 |
Direct observation of phase transition of GeSbTe thin films by Atomic Force Microscope Yang F, Xu L, Zhang R, Geng L, Tong L, Xu J, Su WN, Yu Y, Ma ZY, Chen KJ Applied Surface Science, 258(24), 9751, 2012 |
5 |
Thickness dependence of the amorphous-cubic and cubic-hexagonal phase transition temperatures of GeSbTe thin films on silicon nitride Peng HK, Cil K, Gokirmak A, Bakan G, Zhu Y, Lai CS, Lam CH, Silva H Thin Solid Films, 520(7), 2976, 2012 |
6 |
Fabrication of multi-level switching phase change nano-pillar device using InSe/GeSbTe stacked structure Hong SH, Lee H, Choi Y, Lee YK Current Applied Physics, 11(5), S16, 2011 |
7 |
Influence of the additive Ag for crystallization of amorphous Ge-Sb-Te thin films Song KH, Kim SW, Seo JH, Lee HY Thin Solid Films, 517(14), 3958, 2009 |
8 |
GeSbTe deposition for the PRAM application Lee J, Choi S, Lee C, Kang Y, Kim D Applied Surface Science, 253(8), 3969, 2007 |
9 |
In situ X-ray diffraction study of crystallization process of GeSbTe thin films durin heat treatment Kato N, Konomi I, Seno Y, Motohiro T Applied Surface Science, 244(1-4), 281, 2005 |