검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Characterization of ultrathin-body Germanium-on-insulator (GeOI) structures and MOSFETs on flipped Smart-Cut (TM) GeOI substrates Yu X, Kang J, Zhang R, Takenaka M, Takagi S Solid-State Electronics, 115, 120, 2016 |
| 2 |
In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation Grandchamp B, Jaud MA, Scheiblin P, Romanjek K, Hutin L, Le Royer C, Vinet M Solid-State Electronics, 57(1), 67, 2011 |
| 3 |
High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs Le Royer C, Damlencourt JF, Vincent B, Romanjek K, Le Cunff Y, Grampeix H, Mazzocchi V, Carron V, Nemouchi F, Hartmann JM, Arvet C, Vizioz C, Tabone C, Hutin L, Batude P, Vinet M Solid-State Electronics, 59(1), 2, 2011 |
| 4 |
Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs Van Den Daele W, Le Royer C, Augendre E, Mitard J, Ghibaudo G, Cristoloveanu S Solid-State Electronics, 59(1), 25, 2011 |
| 5 |
Characterization of impact of process options in Germanium-On-Insulator (GeOI) high-k & metal gate pMOSFETs by low-frequency noise Valenza M, Gyani J, Martinez F, Soliveres S, Le Royer C, Augendre E, Clavelier L Solid-State Electronics, 59(1), 34, 2011 |
| 6 |
Influence of induced stress on enrichment kinetic during local Ge condensation of SiGe/SOI mesas Dechoux N, Damlencourt JF, Rivallin P, Brianceau P, Bernasconi S, Benevent V, Vallee C, Barbe JC, Billon T, Bensahel D Thin Solid Films, 518, S92, 2010 |
| 7 |
Monolithic integration of InP-based transistors on Si substrates using MBE Liu WK, Lubyshev D, Fastenau JM, Wu Y, Bulsara MT, Fitzgerald EA, Urteaga M, Ha W, Bergman J, Brar B, Hoke WE, LaRoche JR, Herrick KJ, Kazior TE, Clark D, Smith D, Thompson RF, Drazek C, Daval N Journal of Crystal Growth, 311(7), 1979, 2009 |
| 8 |
High performance 70 nm gate length germanium-on-insulator pMOSFET with high-k/metal gate Romanjek K, Hutin L, Le Royer C, Pouydebasque A, Jaud MA, Tabone C, Augendre E, Sanchez L, Hartmann JM, Grampeix H, Mazzocchi V, Soliveres S, Truche R, Clavelier L, Scheiblin P, Garros X, Reimbold G, Vinet M, Boulanger F, Deleonibus S Solid-State Electronics, 53(7), 723, 2009 |
| 9 |
Investigation of 1/f noise in germanium-on-insulator 0.12 mu m PMOS transistors from weak to strong inversion Gyani J, Valenza M, Soliveres S, Martinez F, Le Royer C, Augendre E, Romanjek K, Drazek C Solid-State Electronics, 53(12), 1268, 2009 |
| 10 |
105 nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200 mm GeOI wafers Le Royer C, Clavelier L, Tabone C, Romanjek K, Deguet C, Sanchez L, Hartmann JM, Roure MC, Grampeix H, Soliveres S, Le Carval G, Truche R, Pouydebasque A, Vinet M, Deleonibus S Solid-State Electronics, 52(9), 1285, 2008 |