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| No. | Article |
|---|---|
| 1 |
Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering Hirayama K, Yoshino K, Ueno R, Iwamura Y, Yang HG, Wang D, Nakashima H Solid-State Electronics, 60(1), 122, 2011 |