검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
The low temperature epitaxy of Ge on Si (100) substrate using two different precursors of GeH4 and Ge2H6 Kil YH, Yuk SH, Kim JH, Kim TS, Kim YT, Choi CJ, Shim KH Solid-State Electronics, 124, 35, 2016 |
| 2 |
Low-temperature reduction of Ge oxide by Si and SiH4 in low-pressure H-2 and Ar environment Minami K, Moriya A, Yuasa K, Maeda K, Yamada M, Kunii Y, Niwano M, Murota J Solid-State Electronics, 110, 40, 2015 |
| 3 |
High-density formation of Ge quantum dots on SiO2 Makihara K, Ikeda M, Ohta A, Takeuchi S, Shimura Y, Zaima S, Miyazaki S Solid-State Electronics, 60(1), 65, 2011 |
| 4 |
Boron-Doped Polycrystalline Sixge1-X Films - Dopant Activation and Solid Solubility Hellberg PE, Gagnor A, Zhang SL, Petersson CS Journal of the Electrochemical Society, 144(11), 3968, 1997 |
| 5 |
Interactive effects in reactive ion etching of W1-xGex van der Drift E, Dinh BQ, Verhoeven PA, Fakkeldij EJM, Zuiddam MR, Zijlstra T Journal of Vacuum Science & Technology B, 15(6), 2676, 1997 |
| 6 |
The Effect of Doping Atoms on the Kinetics of Self-Limiting Tungsten Film Growth on Silicon by Reduction of Tungsten Hexafluoride Vanderjeugd CA, Leusink GJ, Oosterlaken TG, Jongste JF, Janssen GC, Radelaar S Journal of the Electrochemical Society, 142(4), 1326, 1995 |
| 7 |
Transmission Electron-Microscopy Observation of the Early Growth-Stages of SiGe Grown on Si Substrates by Conventional Low-Pressure CVD Fujinaga K Journal of the Electrochemical Society, 142(7), 2341, 1995 |