검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Anti-phase domain induced morphological differences of self-assembled InSb/GaAs quantum dots grown on (001) Ge substrate Zon, Thainoi S, Kiravittaya S, Tandaechanurat A, Nuntawong N, Sopitpan S, Yordsri V, Thanachayanont C, Kanjanachuchai S, Ratanathammaphan S, Panyakeow S Journal of Crystal Growth, 512, 136, 2019 |
| 2 |
Characterization of the A1/Ge/In2Se3/Ga2S3/Al hybrid tunneling barriers designed for Gigahertz/Terahertz applications Qasrawi AF, Omareya OA Thin Solid Films, 660, 276, 2018 |
| 3 |
Morphology of self-assembled InSb/GaAs quantum dots on Ge substrate Zon, Poempool T, Kiravittaya S, Sopitpan S, Thainoi S, Kanjanachuchai S, Ratanathammaphan S, Panyakeow S Journal of Crystal Growth, 468, 541, 2017 |
| 4 |
Atomic layer deposition of CeO2/HfO2 gate dielectrics on Ge substrate Maeng WJ, Oh IK, Kim WH, Kim MK, Lee CW, Lansalot-Matras C, Thompson D, Chu S, Kim H Applied Surface Science, 321, 214, 2014 |
| 5 |
Effect of chemical surface treatments on interfacial and electrical characteristics of atomic-layer-deposited Al2O3 films on Ge substrates Li XF, Li AD, Liu XJ, Gong Y, Chen XC, Li H, Wu D Applied Surface Science, 257(10), 4589, 2011 |
| 6 |
High-efficiency InGaP/In0.01Ga0.99As tandem solar cells lattice-matched to Ge substrates Takamoto T, Agui T, Ikeda E, Kurita H Solar Energy Materials and Solar Cells, 66(1-4), 511, 2001 |
| 7 |
Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1-xGex/Si substrates Sieg RM, Ringel SA, Ting SM, Samavedam SB, Currie M, Langdo T, Fitzgerald EA Journal of Vacuum Science & Technology B, 16(3), 1471, 1998 |