| 1 |
Strain-induced Ge segregation on Si at high temperatures
Shklyaev AA, Ponomarev KE
Journal of Crystal Growth, 413, 94, 2015 |
| 2 |
Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing
Sahin D, Yildiz I, Gencer AI, Aygun G, Slaoui A, Turan R
Thin Solid Films, 518(9), 2365, 2010 |
| 3 |
Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers
Bera MK, Mahata C, Bhattacharya S, Chakraborty AK, Armstrong BM, Gamble HS, Maiti CK
Applied Surface Science, 255(5), 2971, 2008 |
| 4 |
Physico-chemical and electrical properties of rapid thermal oxides on Ge-rich SiGe heterolayers
Das R, Bera MK, Chakraborty S, Saha S, Woitok JF, Maiti CK
Applied Surface Science, 253(3), 1323, 2006 |
| 5 |
The effect of Sb surfactant assisted growth on SiGe surface morphology
Jernigan GG, Thompson PE
Thin Solid Films, 472(1-2), 16, 2005 |
| 6 |
X-ray photoelectron spectroscopy investigations of ultrathin layers grown by ultraviolet-assisted oxidation of SiGe
Craciun V, Lambers ES, Singh RK, Boyd IW
Applied Surface Science, 186(1-4), 237, 2002 |
| 7 |
Effects of Si-cap layer thinning and Ge segregation on the characteristics of Si/SiGe/Si heterostructure pMOSFETs
Song YJ, Lim JW, Kim SH, Bae HC, Kang JY, Park KW, Shim KH
Solid-State Electronics, 46(11), 1983, 2002 |
| 8 |
Hydrogen adsorption and desorption on SiGe investigated by in situ surface infrared spectroscopy
Hirose F, Sakamoto H, Terashi M, Kuge J, Niwano M
Thin Solid Films, 343-344, 404, 1999 |
| 9 |
Characterization of highly strained silicon-germanium alloys grown on silicon substrates using spectroscopic ellipsometry
Lee H
Thin Solid Films, 313-314, 167, 1998 |
| 10 |
Secondary-Ion Mass-Spectrometry Analysis of Ultrathin Impurity Layers in Semiconductors and Their Use in Quantification, Instrumental Assessment, and Fundamental Measurements
Dowsett MG, Barlow RD, Allen PN
Journal of Vacuum Science & Technology B, 12(1), 186, 1994 |
