검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Unzipping and movement of Lomer-type edge dislocations in Ge/GeSi/Si(001) heterostructures Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov LV Journal of Crystal Growth, 483, 265, 2018 |
| 2 |
Fabrication and characterization of single junction GaAs solar cells on Si with As-doped Ge buffer Wang Y, Ren ZK, Thway M, Lee K, Yoon SF, Peters IM, Buonassisi T, Fizgerald EA, Tan CS, Lee KH Solar Energy Materials and Solar Cells, 172, 140, 2017 |
| 3 |
The low temperature epitaxy of Ge on Si (100) substrate using two different precursors of GeH4 and Ge2H6 Kil YH, Yuk SH, Kim JH, Kim TS, Kim YT, Choi CJ, Shim KH Solid-State Electronics, 124, 35, 2016 |
| 4 |
Synthesis and optical properties of Sn-rich Ge1-x - ySixSny materials and devices Xu C, Beeler RT, Jiang LY, Gallagher JD, Favaro R, Menendez J, Kouvetakis J Thin Solid Films, 557, 177, 2014 |
| 5 |
Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes Schmid M, Oehme M, Gollhofer M, Korner R, Kaschel M, Kasper E, Schulze J Thin Solid Films, 557, 351, 2014 |
| 6 |
PureGaB p(+)n Ge diodes grown in large windows to Si with a sub-300 nm transition region Sammak A, Qi L, de Boer WB, Nanver LK Solid-State Electronics, 74, 126, 2012 |
| 7 |
Depth-dependent etch pit density in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template Huang SH, Li C, Zhou ZW, Chen CZ, Zheng YY, Huang W, Lai HK, Chen SY Thin Solid Films, 520(6), 2307, 2012 |