검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Formation and optical properties of Ge films grown on Si(111) substrates using nanocontact epitaxy Tanaka K, Nakamura Y, Yamasaka S, Kikkawa J, Sakai T, Sakai A Applied Surface Science, 325, 170, 2015 |
| 2 |
Heteroepitaxial growth of Ge on compliant strained nano-structured Si lines and dots on (001) silicon on insulator substrate Zaumseil P, Yamamoto Y, Schubert MA, Schroeder T, Tillack B Thin Solid Films, 557, 50, 2014 |
| 3 |
Preparation and characterization of Ge epitaxially grown on nano-structured periodic Si pillars and bars on Si(001) substrate Zaumseil P, Yamamoto Y, Bauer J, Schubert MA, Matejova J, Kozlowski G, Schroeder T, Tillack B Thin Solid Films, 520(8), 3240, 2012 |
| 4 |
B atomic layer doping of Ge Yamamoto Y, Kopke K, Kurps R, Murota J, Tillack B Thin Solid Films, 518, S44, 2010 |
| 5 |
Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches Wang G, Loo R, Takeuchi S, Souriau L, Lin JC, Moussa A, Bender H, De Jaeger B, Ong P, Lee W, Meuris M, Caymax M, Vandervorst W, Blanpain B, Heyns MM Thin Solid Films, 518(9), 2538, 2010 |
| 6 |
Study of the surface cleaning of GOI and SGOI substrates for Ge epitaxial growth Moriyama Y, Hirashita N, Usuda K, Nakaharai S, Sugiyama N, Toyoda E, Takagi S Applied Surface Science, 256(3), 823, 2009 |
| 7 |
GaAs on Ge for CMOS Brammertz G, Caymax M, Meuris M, Heyns M, Mols Y, Degroote S, Leys M Thin Solid Films, 517(1), 148, 2008 |
| 8 |
Islands as catalyst for film relaxation in Bi-mediated Ge epitaxy on Si(111) Falta J, Schmidt T, Materlik G, Zeysing J, Falkenberg G, Johnson RL Applied Surface Science, 162, 256, 2000 |