검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Ultrathin (5 nm) SiGe-On-Insulator with high compressive strain (-2 GPa): From fabrication (Ge enrichment process) to in-depth characterizations Glowacki E, Le Royer C, Morand Y, Pedini JM, Denneulin T, Cooper D, Barnes JP, Nguyen P, Rouchon D, Hartmann JM, Gourhant O, Baylac E, Campidelli Y, Barge D, Bonnin O, Schwarzenbach W Solid-State Electronics, 97, 82, 2014 |
| 2 |
High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs Le Royer C, Damlencourt JF, Vincent B, Romanjek K, Le Cunff Y, Grampeix H, Mazzocchi V, Carron V, Nemouchi F, Hartmann JM, Arvet C, Vizioz C, Tabone C, Hutin L, Batude P, Vinet M Solid-State Electronics, 59(1), 2, 2011 |
| 3 |
Low-temperature characterization and modeling of advanced GeOI pMOSFETs: Mobility mechanisms and origin of the parasitic conduction Van Den Daele W, Augendre E, Le Royer C, Damlencourt JF, Grandchamp B, Cristoloveanu S Solid-State Electronics, 54(2), 205, 2010 |
| 4 |
Notes on the marginal enrichment of Germanium in coal beds Yudovich YE International Journal of Coal Geology, 56(3-4), 223, 2003 |