검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Sublattice reversal in GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures grown on (113)A and (113)B GaAs substrates Lu XM, Minami Y, Kitada T Journal of Crystal Growth, 512, 74, 2019 |
| 2 |
P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD Jin YJ, Chia CK, Liu HF, Wong LM, Chai JW, Chi DZ, Wang SJ Applied Surface Science, 376, 236, 2016 |
| 3 |
Effect of film growth rate and thickness on properties of Ge/GaAs(100) thin films Mitin VF, Lazarov VK, Lari L, Lytvyn PM, Kholevchuk VV, Matveeva LA, Mitin VV, Venger EF Thin Solid Films, 550, 715, 2014 |
| 4 |
3D heteroepitaxy of mismatched semiconductors on silicon Falub CV, Kreiliger T, Isa F, Taboada AG, Meduna M, Pezzoli F, Bergamaschini R, Marzegalli A, Muller E, Chrastina D, Isella G, Neels A, Niedermann P, Dommann A, Miglio L, von Kanel H Thin Solid Films, 557, 42, 2014 |
| 5 |
Vacuum-ultraviolet reflectance difference spectroscopy for characterizing dielectrics-semiconductor interfaces Ogata S, Ohno S, Tanaka M, Mori T, Horikawa T, Yasuda T Thin Solid Films, 519(9), 2830, 2011 |
| 6 |
Study of sublattice inversion in GaAs/Ge/GaAs(001) crystal by X-ray diffraction Nakatani S, Kusano S, Takahashi T, Hirano K, Koh S, Kondo T, Ito R Applied Surface Science, 159, 256, 2000 |
| 7 |
Growth, optical, and electron transport studies across isotype n-GaAs/n-Ge heterojunctions Hudait MK, Krupanidhi SB Journal of Vacuum Science & Technology B, 17(3), 1003, 1999 |
| 8 |
Surface-Morphology and Quantum-Dot Self-Assembly in Growth of Strained-Layer Semiconducting-Films Khor KE, Dassarma S Journal of Vacuum Science & Technology B, 15(4), 1051, 1997 |
| 9 |
Electronic-Properties of the Ge/RBF/GaAs System - The Effect of the RBF Intralayer Stankiewicz B Thin Solid Films, 280(1-2), 178, 1996 |