검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Functionalization of Ge(100) surface by adsorption of phenylthiol Sung D, Kim DH, Hong S Applied Surface Science, 456, 908, 2018 |
| 2 |
Isolated benzene and dichlorobenzene on the Ge(100)-c(4 x 2) surface Puchalska A, Jurczyszyn L, Stankiewicz B, Radny MW Applied Surface Science, 304, 96, 2014 |
| 3 |
In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient Barrigon E, Bruckner S, Supplie O, Doscher H, Rey-Stolle I, Hannappel T Journal of Crystal Growth, 370, 173, 2013 |
| 4 |
The dissociative adsorption of borane on the Ge(100)-2 x 1 surface: A density functional theory study Xu YJ, Li JQ Applied Surface Science, 252(16), 5855, 2006 |
| 5 |
Effect of carbon on the thermal stability of a Si atomic layer on Ge(100) Fujiu M, Takahashi K, Sakuraba M, Murota J Applied Surface Science, 224(1-4), 206, 2004 |
| 6 |
Si epitaxial growth on SiH3CH3 reacted Ge(100) and intermixing between Si and Ge during heat treatment Takahashi K, Fujiu M, Sakuraba M, Murota J Applied Surface Science, 212, 193, 2003 |
| 7 |
Core level photoemission studies of the sulphur terminated Ge(100) surface Roche J, Ryan P, Hughes GJ Applied Surface Science, 174(3-4), 271, 2001 |
| 8 |
Evidence for liquid indium nanoparticles on Ge(001) at room temperature Bottomley DJ, Iwami M, Uehara Y, Ushioda S Journal of Vacuum Science & Technology B, 17(1), 12, 1999 |
| 9 |
Use of reactive ion sputtering to produce clean germanium surfaces in a carbon rich environment - an ion scattering study Smentkowski VS, Holecek JC, Schultz JA, Krauss AR, Gruen DM Journal of Vacuum Science & Technology A, 16(3), 1779, 1998 |
| 10 |
Atomic-Level Investigation of the Growth of Si/Ge by Ultrahigh-Vacuum Chemical-Vapor-Deposition Lin DS, Miller T, Chiang TC Journal of Vacuum Science & Technology A, 15(3), 919, 1997 |