검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Investigation of gate length and fringing field effects for program and erase efficiency in gate-all-around SONOS memory cells Kim MS, Choi SJ, Moon DI, Duarte JP, Kim S, Choi YK Solid-State Electronics, 79, 7, 2013 |
| 2 |
Scalability of the drain-current drive of AlGaN/GaN HFETs with gate-length Sikder MJ, Valizadeh P Solid-State Electronics, 89, 105, 2013 |
| 3 |
Parasitic capacitance removal of sub-100 nm p-MOSFETs using capacitance-voltage measurements Steinke DR, Piccirillo J, Gausepohl SC, Vivekand S, Rodgers MP, Lee JU Solid-State Electronics, 68, 51, 2012 |
| 4 |
Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain Borg M, Lefebvre E, Malmkvist M, Desplanque L, Wallart X, Roelens Y, Dambrine G, Cappy A, Bollaert S, Grahn J Solid-State Electronics, 52(5), 775, 2008 |
| 5 |
Sidewall transfer lithography for reliable fabrication of nanowires and deca-nanometer MOSFETs Hallstedt J, Hellstrom PE, Radamson HH Thin Solid Films, 517(1), 117, 2008 |
| 6 |
50 nm metamorphic GaAs and InPHEMTs Thayne I, Elgaid K, Moran D, Cao X, Boyd E, McLelland H, Holland M, Thoms S, Stanley C Thin Solid Films, 515(10), 4373, 2007 |
| 7 |
Electrical characterization of 12 nm EJ-MOSFETs on SOI substrates Henschel W, Wahlbrink T, Georgiev YM, Lemme M, Mollenhauer T, Vratzov B, Fuchs A, Kurz H, Kittler M, Schwierz F Solid-State Electronics, 48(5), 739, 2004 |