검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Effects of Anneal and Silicon Interface Passivation Layer Thickness on Device Characteristics of In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors Zhu F, Zhao H, Ok I, Kim HS, Yum J, Lee JC, Goel N, Tsai W, Gaspe CK, Santos MB Electrochemical and Solid State Letters, 12(4), H131, 2009 |
| 2 |
InSb quantum-well structures for electronic device applications Edirisooriya M, Mishima TD, Gaspe CK, Bottoms K, Hauenstein RJ, Santos MB Journal of Crystal Growth, 311(7), 1972, 2009 |