화학공학소재연구정보센터
검색결과 : 15건
No. Article
1 Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers
Podlipskas Z, Aleksiejunas R, Nargelas S, Jurkevicius J, Mickevicius J, Kadys A, Tamulaitis G, Shur MS, Shatalov M, Yang JW, Gaska R
Current Applied Physics, 16(6), 633, 2016
2 Novel AlInN/GaN integrated circuits operating up to 500 degrees C
Gaska R, Gaevski M, Jain R, Deng J, Islam M, Simin G, Shur M
Solid-State Electronics, 113, 22, 2015
3 Migration-enhanced metal-organic chemical vapor deposition of AlxIn1-xN/GaN heterostructures (x > 0.75) on c-plane sapphire
Billingsley D, Yang JW, Gaska R, Shur M
Journal of Crystal Growth, 327(1), 98, 2011
4 Maximum powers of low-loss series-shunt FET RF switches
Yang Z, Hu X, Yang J, Simin G, Shur M, Gaska R
Solid-State Electronics, 53(2), 117, 2009
5 Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs
Pala N, Hu X, Deng J, Yang J, Gaska R, Yang Z, Koudymov A, Shur MS, Simin G
Solid-State Electronics, 52(8), 1217, 2008
6 Nonequilibrium carrier lifetime and diffusion coefficients in 6H-SiC
Tamulaitis G, Yilmaz I, Shur MS, Gaska R, Anderson T
Materials Science Forum, 457-460, 665, 2004
7 Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors
Pala N, Rumyantsev S, Shur M, Gaska R, Hu X, Yang J, Simin G, Khan MA
Solid-State Electronics, 47(6), 1099, 2003
8 Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals
Rojo JC, Schowalter LJ, Gaska R, Shur M, Khan MA, Yang J, Koleske DD
Journal of Crystal Growth, 240(3-4), 508, 2002
9 Stimulated emission in InGaN/GaN quantum wells
Jursenas S, Miasojedovas S, Kurilcik N, Kurilcik G, Zukauskas A, Yang J, Khan MA, Shur MS, Gaska R
Materials Science Forum, 384-3, 265, 2002
10 Transient response of highly doped thin channel GaN metal-semiconductor and metal-oxide-semiconductor field effect transistors
Pala N, Rumyantsev SL, Shur MS, Hu X, Tarakji A, Gaska R, Khan MA, Simin G, Yang J
Solid-State Electronics, 46(5), 711, 2002