검색결과 : 15건
No. | Article |
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1 |
Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers Podlipskas Z, Aleksiejunas R, Nargelas S, Jurkevicius J, Mickevicius J, Kadys A, Tamulaitis G, Shur MS, Shatalov M, Yang JW, Gaska R Current Applied Physics, 16(6), 633, 2016 |
2 |
Novel AlInN/GaN integrated circuits operating up to 500 degrees C Gaska R, Gaevski M, Jain R, Deng J, Islam M, Simin G, Shur M Solid-State Electronics, 113, 22, 2015 |
3 |
Migration-enhanced metal-organic chemical vapor deposition of AlxIn1-xN/GaN heterostructures (x > 0.75) on c-plane sapphire Billingsley D, Yang JW, Gaska R, Shur M Journal of Crystal Growth, 327(1), 98, 2011 |
4 |
Maximum powers of low-loss series-shunt FET RF switches Yang Z, Hu X, Yang J, Simin G, Shur M, Gaska R Solid-State Electronics, 53(2), 117, 2009 |
5 |
Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs Pala N, Hu X, Deng J, Yang J, Gaska R, Yang Z, Koudymov A, Shur MS, Simin G Solid-State Electronics, 52(8), 1217, 2008 |
6 |
Nonequilibrium carrier lifetime and diffusion coefficients in 6H-SiC Tamulaitis G, Yilmaz I, Shur MS, Gaska R, Anderson T Materials Science Forum, 457-460, 665, 2004 |
7 |
Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors Pala N, Rumyantsev S, Shur M, Gaska R, Hu X, Yang J, Simin G, Khan MA Solid-State Electronics, 47(6), 1099, 2003 |
8 |
Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals Rojo JC, Schowalter LJ, Gaska R, Shur M, Khan MA, Yang J, Koleske DD Journal of Crystal Growth, 240(3-4), 508, 2002 |
9 |
Stimulated emission in InGaN/GaN quantum wells Jursenas S, Miasojedovas S, Kurilcik N, Kurilcik G, Zukauskas A, Yang J, Khan MA, Shur MS, Gaska R Materials Science Forum, 384-3, 265, 2002 |
10 |
Transient response of highly doped thin channel GaN metal-semiconductor and metal-oxide-semiconductor field effect transistors Pala N, Rumyantsev SL, Shur MS, Hu X, Tarakji A, Gaska R, Khan MA, Simin G, Yang J Solid-State Electronics, 46(5), 711, 2002 |