검색결과 : 16건
No. | Article |
---|---|
1 |
Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers Bera MK, Mahata C, Bhattacharya S, Chakraborty AK, Armstrong BM, Gamble HS, Maiti CK Applied Surface Science, 255(5), 2971, 2008 |
2 |
Germanium on sapphire by wafer bonding Baine PT, Gamble HS, Armstrong BM, McNeill DW, Mitchell SJN, Low YH, Rainey PV Solid-State Electronics, 52(12), 1840, 2008 |
3 |
Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors Ruddell FH, Suder SL, Bain MF, Montgomery JH, Armstrong BM, Gamble HS, Denvir D, Casse G, Bowcock T, Allport PP, Marczewski J, Kucharski K, Tomaszewski D, Niemiec H, Kucewicz W Solid-State Electronics, 52(12), 1849, 2008 |
4 |
Multiple self-aligned iron nanowires by a dual selective chemical vapor deposition process Bien DCS, Bain MF, Low YH, Mitchell NSJ, Armstrong MB, Gamble HS Electrochemical and Solid State Letters, 10(9), H251, 2007 |
5 |
Fabrication of self-aligned sub-100 nm iron wires by selective chemical vapor deposition Low YH, Bain MF, Bien DCS, Mitchell NSJ, Gamble HS Electrochemical and Solid State Letters, 9(12), G340, 2006 |
6 |
Cross-talk suppression in SOI substrates Baine P, Jin M, Gamble HS, Armstrong BM, Linton D, Mohammed F Solid-State Electronics, 49(9), 1461, 2005 |
7 |
Chemical bonding modifications of tetrahedral amorphous carbon and nitrogenated tetrahedral amorphous carbon films induced by rapid thermal annealing McCann R, Roy SS, Papakonstantinou P, Bain MF, Gamble HS, McLaughlin JA Thin Solid Films, 482(1-2), 34, 2005 |
8 |
Determination of band offsets in strained-Si heterolayers Maiti C, Samanta SK, Chatterjee S, Dalapati GK, Bhattacharya S, Armstrong BM, Gamble HS, McCarthy J, Perova TS, Moore RA Thin Solid Films, 462-63, 80, 2004 |
9 |
Silicon-on-insulator substrates with buried tungsten silicide layer Gamble HS, Armstrong BM, Baine P, Bain M, McNeill DW Solid-State Electronics, 45(4), 551, 2001 |
10 |
Spectroscopic investigations of borosilicate glass and its application as a dopant source for shallow junctions Nolan M, Perova TS, Moore RA, Beitia CE, McGilp JF, Gamble HS Journal of the Electrochemical Society, 147(8), 3100, 2000 |