화학공학소재연구정보센터
검색결과 : 16건
No. Article
1 Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers
Bera MK, Mahata C, Bhattacharya S, Chakraborty AK, Armstrong BM, Gamble HS, Maiti CK
Applied Surface Science, 255(5), 2971, 2008
2 Germanium on sapphire by wafer bonding
Baine PT, Gamble HS, Armstrong BM, McNeill DW, Mitchell SJN, Low YH, Rainey PV
Solid-State Electronics, 52(12), 1840, 2008
3 Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors
Ruddell FH, Suder SL, Bain MF, Montgomery JH, Armstrong BM, Gamble HS, Denvir D, Casse G, Bowcock T, Allport PP, Marczewski J, Kucharski K, Tomaszewski D, Niemiec H, Kucewicz W
Solid-State Electronics, 52(12), 1849, 2008
4 Multiple self-aligned iron nanowires by a dual selective chemical vapor deposition process
Bien DCS, Bain MF, Low YH, Mitchell NSJ, Armstrong MB, Gamble HS
Electrochemical and Solid State Letters, 10(9), H251, 2007
5 Fabrication of self-aligned sub-100 nm iron wires by selective chemical vapor deposition
Low YH, Bain MF, Bien DCS, Mitchell NSJ, Gamble HS
Electrochemical and Solid State Letters, 9(12), G340, 2006
6 Cross-talk suppression in SOI substrates
Baine P, Jin M, Gamble HS, Armstrong BM, Linton D, Mohammed F
Solid-State Electronics, 49(9), 1461, 2005
7 Chemical bonding modifications of tetrahedral amorphous carbon and nitrogenated tetrahedral amorphous carbon films induced by rapid thermal annealing
McCann R, Roy SS, Papakonstantinou P, Bain MF, Gamble HS, McLaughlin JA
Thin Solid Films, 482(1-2), 34, 2005
8 Determination of band offsets in strained-Si heterolayers
Maiti C, Samanta SK, Chatterjee S, Dalapati GK, Bhattacharya S, Armstrong BM, Gamble HS, McCarthy J, Perova TS, Moore RA
Thin Solid Films, 462-63, 80, 2004
9 Silicon-on-insulator substrates with buried tungsten silicide layer
Gamble HS, Armstrong BM, Baine P, Bain M, McNeill DW
Solid-State Electronics, 45(4), 551, 2001
10 Spectroscopic investigations of borosilicate glass and its application as a dopant source for shallow junctions
Nolan M, Perova TS, Moore RA, Beitia CE, McGilp JF, Gamble HS
Journal of the Electrochemical Society, 147(8), 3100, 2000