검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs Gamarra P, Lacam C, Tordjman M, Medjdoub F, di Forte-Poisson MA Journal of Crystal Growth, 464, 143, 2017 |
| 2 |
Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices Gamarra P, Lacam C, Tordjman M, Splettstosser J, Schauwecker B, di Forte-Poisson MA Journal of Crystal Growth, 414, 232, 2015 |
| 3 |
Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiC Gamarra P, Lacam C, Tordjman M, di Forte-Poisson MA Journal of Crystal Growth, 370, 282, 2013 |