화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Analysis of the effect of symmetric/asymmetric CUSP magnetic fields on melt/crystal interface during Czochralski silicon growth
Daggolu P, Ryu JW, Galyukov A, Kondratyev A
Journal of Crystal Growth, 452, 22, 2016
2 Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors
Kadinski L, Merai V, Parekh A, Ramer J, Armour EA, Stall R, Gurary A, Galyukov A, Makarov Y
Journal of Crystal Growth, 261(2-3), 175, 2004
3 Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors
Lobanova A, Mazaev K, Yakovlev E, Talalaev R, Galyukov A, Makarov Y, Gotthold D, Albert B, Kadinski L, Peres B
Journal of Crystal Growth, 266(1-3), 354, 2004