| 1 |
Synthesis and characterization of In1-xGaxP@ZnS alloy core-shell type colloidal quantum dots
Joo JW, Choi YH, Suh YH, Lee CL, Bae JW, Park JN
Journal of Industrial and Engineering Chemistry, 88, 106, 2020 |
| 2 |
Microstructure, optical and electrical properties of thin films of gallium-phosphorus-titanium alloys synthesized by asymmetric bipolar pulsed direct current magnetron sputtering
Ponken T, Burinprakhon T
Thin Solid Films, 681, 6, 2019 |
| 3 |
Reduced dislocation density in GaxIn1-xP compositionally graded buffer layers through engineered glide plane switch
Schulte KL, France RM, McMahon WE, Norman AG, Guthrey HL, Geisz JF
Journal of Crystal Growth, 464, 20, 2017 |
| 4 |
Propagation length of surface plasmon polaritons excited by a 1D plasmonic grating
Iqbal T
Current Applied Physics, 15(11), 1445, 2015 |
| 5 |
Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers
Mukherjee K, Beaton DA, Mascarenhas A, Bulsara MT, Fitzgerald EA
Journal of Crystal Growth, 392, 74, 2014 |
| 6 |
Toward a tandem gallium phosphide on silicon solar cell through liquid phase epitaxy growth
Kotulak NA, Diaz M, Barnett A, Opila RL
Thin Solid Films, 556, 236, 2014 |
| 7 |
Infrared transmissive and rain-erosion resistant performances of GeC/GaP double-layer thin films on ZnS substrates
Li YP, Wang N, Che XS, Chen HB, Liu ZT
Applied Surface Science, 264, 538, 2013 |
| 8 |
Zinc-doped gallium phosphide nanowires for photovoltaic structures
Hasenohrl S, Elias P, Soltys J, Stoklas R, Dujavova-Laurencikova A, Novak J
Applied Surface Science, 269, 72, 2013 |
| 9 |
Antiphase domain annihilation during growth of GaP on Si by molecular beam epitaxy
Lin AC, Fejer MM, Harris JS
Journal of Crystal Growth, 363, 258, 2013 |
| 10 |
In(Ga)As quantum dots on InGaP layers grown by solid-source molecular beam epitaxy
Sugaya T, Oshima R, Matsubara K, Niki S
Journal of Crystal Growth, 378, 430, 2013 |
