검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy Aseev P, Gacevic Z, Manuel JM, Jimenez JJ, Garcia R, Morales FM, Calleja E Journal of Crystal Growth, 493, 65, 2018 |
| 2 |
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells Utrilla AD, Reyes DF, Llorens JM, Artacho I, Ben T, Gonzalez D, Gacevic Z, Kurtz A, Guzman A, Hierro A, Ulloa JM Solar Energy Materials and Solar Cells, 159, 282, 2017 |
| 3 |
Comparative study of single InGaN layers grown on Si(111) and GaN(0001) templates: The role of surface wetting and epitaxial constraint Gomez VJ, Gacevic Z, Soto-Rodriguez PED, Aseev P, Notzel R, Calleja E, Sanchez-Garcia MA Journal of Crystal Growth, 447, 48, 2016 |
| 4 |
Impact of alloyed capping layers on the performance of In As quantum dot solar cells Utrilla AD, Ulloa JM, Gacevic Z, Reyes DF, Artacho I, Ben T, Gonzalez D, Hierro A, Guzman A Solar Energy Materials and Solar Cells, 144, 128, 2016 |
| 5 |
A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy Gacevic Z, Gomez VJ, Lepetit NG, Rodriguez PEDS, Bengoechea A, Fernandez-Garrido S, Notzel R, Calleja E Journal of Crystal Growth, 364, 123, 2013 |