검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties Dominec F, Hospodkova A, Hubacek T, Zikova M, Pangrac J, Kuldova K, Vetushka A, Hulicius E Journal of Crystal Growth, 507, 246, 2019 |
| 2 |
Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties Zikova M, Hospodkova A, Pangrac J, Hubacek T, Oswald J, Kuldova K, Hajek F, Ledoux G, Dujardin C Journal of Crystal Growth, 506, 8, 2019 |
| 3 |
Optimization of intersubband optical nonlinearities in continually graded AlGaN quantum well structures Radovanovic J, Milanovic V, Ikonic Z, Indjin D Materials Science Forum, 453-454, 21, 2004 |
| 4 |
Stimulated emission in InGaN/GaN quantum wells Jursenas S, Miasojedovas S, Kurilcik N, Kurilcik G, Zukauskas A, Yang J, Khan MA, Shur MS, Gaska R Materials Science Forum, 384-3, 265, 2002 |