검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl-2/N-2/O-2 plasma with a low-energy ion bombardment Zhong YZ, Yu Z, Gao HW, Dai SJ, He JL, Feng MX, Qian S, Zhang JJ, Zhao YF, An DS, Hui Y Applied Surface Science, 420, 817, 2017 |
| 2 |
Effect of profile and size of isolation trench on the optical and electrical performance of GaN-based high-voltage LEDs Zhou SJ, Zheng CJ, Lv JJ, Liu YC, Yuan S, Liu S, Ding H Applied Surface Science, 366, 299, 2016 |
| 3 |
Analysis of GaN etching damage by capacitively coupled RF Ar plasma exposure Kawakami R, Inaoka T, Minamoto S, Kikuhara Y Thin Solid Films, 516(11), 3478, 2008 |