| 1 |
Analysis of reverse gate leakage mechanism of AlGaN/GaN HEMTs with N-2 plasma surface treatment
Liu H, Zhang ZJ, Luo WJ
Solid-State Electronics, 144, 60, 2018 |
| 2 |
High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications
Zhou Q, Yang S, Chen WJ, Zhang B, Feng ZH, Cai SJ, Chen KJ
Solid-State Electronics, 91, 19, 2014 |
| 3 |
Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs
Zhou XY, Feng ZH, Wang L, Wang YG, Lv YJ, Dun SB, Cai SJ
Solid-State Electronics, 100, 15, 2014 |
| 4 |
Effect of pinch-off current leakage characteristics on microwave power performances of AlxGa1-xN/GaN HEMTs
Peng MZ, Zheng YK, Ge Q, Wei K, Liu XY
Solid-State Electronics, 80, 1, 2013 |
| 5 |
Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance
Manoi A, Pomeroy JW, Lossy R, Pazirandeh R, Wurfl J, Uren MJ, Martin T, Kuball M
Solid-State Electronics, 57(1), 14, 2011 |
| 6 |
An analytical model for current-voltage characteristics of AlGaN/GaN HEMTs in presence of self-heating effect
Cheng XX, Li M, Wang Y
Solid-State Electronics, 54(1), 42, 2010 |
| 7 |
Detailed analysis of parasitic loading effects on power performance of GaN-on-silicon HEMTs
Xiao DP, Schreurs D, De Raedt W, Derluyn J, Germain M, Nauwelaers B, Borghs G
Solid-State Electronics, 53(2), 185, 2009 |
| 8 |
Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs
Desmaris V, Shiu JY, Rorsman N, Zirath H, Chang EY
Solid-State Electronics, 52(5), 632, 2008 |
| 9 |
High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz
Wang XL, Chen TS, Xiao HL, Wang CM, Hu GX, Luo WJ, Tang J, Guo LC, Li JM
Solid-State Electronics, 52(6), 926, 2008 |
| 10 |
The impact of post gate annealing on noise performance of AlGaN/GaN microwave HEMTs
Liu D, Lee J, Lu W
Solid-State Electronics, 51(1), 90, 2007 |
