| 1 |
Electronic band alignment in AlGaN/GaN high electron-mobility transistors investigated using scanning photocurrent microscopy
Kim YC, Son BH, Jeong HY, Park KH, Ahn YH
Current Applied Physics, 19(4), 406, 2019 |
| 2 |
High-periphery GaN HEMT modeling up to 65 GHz and 200 degrees C
Crupi G, Raffo A, Vadala V, Vannini G, Caddemi A
Solid-State Electronics, 152, 11, 2019 |
| 3 |
Electrothermal studies of GaN-based high electron mobility transistors with improved thermal designs
Hao Q, Zhao HB, Xiao Y, Kronenfeld MB
International Journal of Heat and Mass Transfer, 116, 496, 2018 |
| 4 |
Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT
Malik A, Sharma C, Laishram R, Bag RK, Rawal DS, Vinayak S, Sharma RK
Solid-State Electronics, 142, 8, 2018 |
| 5 |
Ultra-low rate dry etching conditions for fabricating normally-off field effect transistors on AlGaN/GaN heterostructures
Kim ZS, Lee HS, Na J, Bae SB, Nam E, Lim JW
Solid-State Electronics, 140, 12, 2018 |
| 6 |
A novel empirical I-V model for GaN HEMTs
Yang J, Jia YT, Ye N, Gao S
Solid-State Electronics, 146, 1, 2018 |
| 7 |
High temperature storage test and its effect on the thermal stability and electrical characteristics of AlGaN/GaN high electron mobility transistors
Lee JM, Min BG, Ju CW, Ahn HK, Lim JW
Current Applied Physics, 17(2), 157, 2017 |
| 8 |
High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AIN spacer layer
Ko TS, Lin DY, Lin CF, Chang CW, Zhang JC, Tu SJ
Journal of Crystal Growth, 464, 175, 2017 |
| 9 |
Analysis of degradation mechanisms in AlInN/GaN HEMTs by electroluminescence technique
Berthet F, Petitdidier S, Guhel Y, Trolet JL, Mary P, Vivier A, Gaquiere C, Boudart B
Solid-State Electronics, 127, 13, 2017 |
| 10 |
Influence of mesa edge capacitance on frequency behavior of millimeter-wave AlGaN/GaN HEMTs
Du JF, Wang K, Liu Y, Bai ZY, Liu Y, Feng ZH, Dun SB, Yu Q
Solid-State Electronics, 129, 1, 2017 |
