| 1 |
게이트 하부 식각 구조 및 HfO 2 절연층이 도입된 AlGaN/GaN 기반 전계 효과 트랜지스터
김유경, 손주연, 이승섭, 전주호, 김만경, 장수환
Korean Chemical Engineering Research, 60(2), 313, 2022 |
| 2 |
Modulated 3D light absorption profile in GaN nanorod arrays
Keles F, Seo HW
Current Applied Physics, 22, 50, 2021 |
| 3 |
Theoretical study on2Dphotoelectric emission ofGaNnanorod array and nanocone array photocathode
Zhang XY, Liu L, Lv ZS, Lu FF, Tian J
International Journal of Energy Research, 45(2), 2265, 2021 |
| 4 |
pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption
Wang JN, Zhang X, Li H, Wang C, Li HR, Keller S, Mishra UK, Nener BD, Parish G, Atkin R
Journal of Colloid and Interface Science, 583, 331, 2021 |
| 5 |
Analysis of a novel photovoltaic/thermal system using InGaN/GaN MQWs cells in high temperature applications
Ren X, Li J, Gao DT, Wu LJ, Pei G
Renewable Energy, 168, 11, 2021 |
| 6 |
A Novel Electrochemical Hydrogen Peroxide Sensor Based on AuNPs/n-Type GaN Electrode
Ma CY, Yang CK, Zhang MR
Chemistry Letters, 49(6), 656, 2020 |
| 7 |
Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment
Kim K, Jang J
Current Applied Physics, 20(2), 293, 2020 |
| 8 |
van der Waals gap-inserted light-emitting p-n heterojunction of ZnO nanorods/graphene/p-GaN film
Moon SH, Jeong J, Kim GW, Jin DK, Kim YJ, Kim JK, Kim KS, Kim G, Hong YJ
Current Applied Physics, 20(2), 352, 2020 |
| 9 |
Modeling and analysis of the effects of inhomogeneous carrier distributions in InGaN multiple quantum wells
Ryu HY
Current Applied Physics, 20(12), 1351, 2020 |
| 10 |
In situ control of nanowire resistance with real time monitoring by using self- heating induced oxidation
Zong Y, Huang H, Zhao DN, Tang ZN
Current Applied Physics, 20(7), 871, 2020 |
