검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
High accuracy thermal resistance measurement in GaN/InGaN laser diodes Wen PY, Li DY, Zhang SM, Liu JP, Zhang LQ, Zhou K, Feng MX, Li ZC, Tian AQ, Yang H Solid-State Electronics, 106, 50, 2015 |
| 2 |
The effect of dislocations on the efficiency of InGaN/GaN solar cells Zhang Y, Kappers MJ, Zhu D, Oehler F, Gao F, Humphreys CJ Solar Energy Materials and Solar Cells, 117, 279, 2013 |
| 3 |
Iridium-based semi-transparent current spreading layer on short-period-superlattice (SPS) tunneling contact of InGaN/GaN LEDs Chuang RW, Chiu YJ, Yu CL Solid-State Electronics, 50(7-8), 1212, 2006 |
| 4 |
Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition Feng ZC, Liu W, Chua SJ, Yu JW, Yang CC, Yang TR, Zhao J Thin Solid Films, 498(1-2), 118, 2006 |
| 5 |
Indium concentration influence on PL spatial inhomogeneity in InGaN single quantum well structures detected by original low-cost near-field probes Micheletto R, Yoshimatsu N, Kaneta A, Kawakami Y, Fujita S Applied Surface Science, 229(1-4), 338, 2004 |
| 6 |
Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes Lin CF, Yao HH, Lu JW, Hsieh YL, Kuo HC, Wang SC Journal of Crystal Growth, 261(2-3), 359, 2004 |
| 7 |
Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405 nm Cao XA, Yan CH, D'Evelyn MP, LeBoeuf SF, Kretchmer JW, Klinger R, Arthur SD, Merfeld DW Journal of Crystal Growth, 269(2-4), 242, 2004 |
| 8 |
High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers Kuan TM, Chang SJ, Su YK, Lin JC, Wei SC, Wang CK, Huang CI, Lan WH, Bardwell JA, Tang H, Lin WJ, Cherng YT Journal of Crystal Growth, 272(1-4), 300, 2004 |
| 9 |
Reactive ion etching of GaN/InGaN using BCl3 plasma Hong HF, Chao CK, Chyi JI, Tzeng YC Materials Chemistry and Physics, 77(2), 411, 2003 |
| 10 |
Thermal annealing effects on the optical gain of InGaN/GaN quantum well structures Chen CC, Hsueh TH, Ting YS, Chi GC, Chang CA, Wang SC Solid-State Electronics, 47(3), 575, 2003 |