검색결과 : 46건
| No. | Article |
|---|---|
| 1 |
Nanostructured GaN and AlGaN/GaN heterostructure for catalyst-free low-temperature CO sensing Mishra M, Bhalla NK, Dash A, Gupta G Applied Surface Science, 481, 379, 2019 |
| 2 |
Theoretical study of the influence of surface effects on GaN-based chemical sensors Anvari R, Spagnoli D, Umana-Membreno GA, Parish G, Nener B Applied Surface Science, 452, 75, 2018 |
| 3 |
Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling Racko J, Benko P, Mikolasek M, Granzner R, Kittler M, Schwierz F, Harmatha L, Breza J Applied Surface Science, 395, 122, 2017 |
| 4 |
Influence of GaN/AlGaN/GaN (0001) and Si (100) substrates on structural properties of extremely thin MoS2 films grown by pulsed laser deposition Chromik S, Sojkova M, Vretenar V, Rosova A, Dobrocka E, Hulman M Applied Surface Science, 395, 232, 2017 |
| 5 |
Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism Sahoo AK, Subramani NK, Nallatamby JC, Sylvain L, Loyez C, Quere R, Medjdoub F Solid-State Electronics, 115, 12, 2016 |
| 6 |
Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts Takhar K, Kumar SA, Meer M, Upadhyay BB, Upadhyay P, Khachariya D, Ganguly S, Saha D Solid-State Electronics, 122, 70, 2016 |
| 7 |
Reduction of leakage current by O-2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors Jiang Y, Wang QP, Zhang FZ, Li L, Zhou DQ, Liu Y, Wang DJ, Ao JP Applied Surface Science, 351, 1155, 2015 |
| 8 |
A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times Racko J, Benko P, Hotovy I, Harmatha L, Mikolasek M, Granzner R, Kittler M, Schwierz F, Breza J Applied Surface Science, 312, 68, 2014 |
| 9 |
Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure Harmatha L, Stuchlikova L, Racko J, Marek J, Pechacek J, Benko P, Nemec M, Breza J Applied Surface Science, 312, 102, 2014 |
| 10 |
An unified analytical model for design consideration of doped cubic and undoped hexagonal AlGaN/GaN MIS gate HEMTs Ghosh S, Bag A, Jana SK, Mukhopadhyay P, Dinara SM, Kabi S, Biswas D Solid-State Electronics, 96, 1, 2014 |