| 1 |
Theoretical study of the influence of surface effects on GaN-based chemical sensors
Anvari R, Spagnoli D, Umana-Membreno GA, Parish G, Nener B
Applied Surface Science, 452, 75, 2018 |
| 2 |
Influence of GaN/AlGaN/GaN (0001) and Si (100) substrates on structural properties of extremely thin MoS2 films grown by pulsed laser deposition
Chromik S, Sojkova M, Vretenar V, Rosova A, Dobrocka E, Hulman M
Applied Surface Science, 395, 232, 2017 |
| 3 |
Reduction of leakage current by O-2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors
Jiang Y, Wang QP, Zhang FZ, Li L, Zhou DQ, Liu Y, Wang DJ, Ao JP
Applied Surface Science, 351, 1155, 2015 |
| 4 |
Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure
Harmatha L, Stuchlikova L, Racko J, Marek J, Pechacek J, Benko P, Nemec M, Breza J
Applied Surface Science, 312, 102, 2014 |
| 5 |
Determination of the average channel temperature of GaN MOSHFETs under continuous wave and periodic-pulsed RF operational conditions
Deng YQ, Islam MDM, Gaevski M, Yang ZJ, Adivarahan V, Khan A
Solid-State Electronics, 52(7), 1106, 2008 |
| 6 |
Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices
Kuo CH, Sheu JK, Chi GC, Huang YL, Yeh TW
Solid-State Electronics, 45(5), 717, 2001 |
