검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes Senawiratne J, Chatterjee A, Detchprohm T, Zhao W, Li Y, Zhu M, Xia Y, Li X, Plawsky J, Wetzel C Thin Solid Films, 518(6), 1732, 2010 |
| 2 |
Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth Detchprohm T, Xia Y, Xi Y, Zhu M, Zhao W, Li Y, Schubert EF, Liu L, Tsvetkov D, Hanser D, Wetzel C Journal of Crystal Growth, 298, 272, 2007 |
| 3 |
Characterization of local structures around In atoms in Ga1-In-x(x) layers by fluorescence EXAFS measurements Tabuchi M, Katou D, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I Journal of Crystal Growth, 237, 1139, 2002 |
| 4 |
GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range Damilano B, Grandjean N, Massies J, Semond F Applied Surface Science, 164, 241, 2000 |
| 5 |
Structural and optical characterization of InGaN/GaN multiple quantum wells grown by molecular beam epitaxy Ng HM, Moustakas TD, Ludwig KF Journal of Vacuum Science & Technology B, 18(3), 1457, 2000 |