검색결과 : 27건
No. | Article |
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1 |
Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications Zikova M, Hospodkova A, Pangrac J, Oswald J, Hulicius E Journal of Crystal Growth, 464, 59, 2017 |
2 |
GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications Vyskocil J, Hospodkova A, Petricek O, Pangrac J, Zikova M, Oswald J, Vetushka A Journal of Crystal Growth, 464, 64, 2017 |
3 |
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells Utrilla AD, Reyes DF, Llorens JM, Artacho I, Ben T, Gonzalez D, Gacevic Z, Kurtz A, Guzman A, Hierro A, Ulloa JM Solar Energy Materials and Solar Cells, 159, 282, 2017 |
4 |
Study on the impact of device parameter variations on performance of III-V homojunction and heterojunction tunnel FETs Hemmat M, Kamal M, Afzali-Kusha A, Pedram M Solid-State Electronics, 124, 46, 2016 |
5 |
Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy Hospodkova A, Pangrac J, Vyskocil J, Zikova M, Oswald J, Komninou P, Hulicius E Journal of Crystal Growth, 414, 156, 2015 |
6 |
MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 mu m Zikova M, Hospodkova A, Pangrac J, Oswald J, Krcil P, Hulicius E, Komninou P, Kioseoglou J Journal of Crystal Growth, 414, 167, 2015 |
7 |
Growth and properties of A(III)B(V) QD structures for intermediate band solar cells Vyskocil J, Gladkov P, Petricek O, Hospodkova A, Pangrac J Journal of Crystal Growth, 414, 172, 2015 |
8 |
Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots Hospodkova A, Pangrac J, Zikova M, Oswald J, Vyskocil J, Komninou P, Kioseoglou J, Florini N, Hulicius E Applied Surface Science, 301, 173, 2014 |
9 |
Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs Hazdra P, Oswald J, Hospodkova A, Hulicius E, Pangrac J Thin Solid Films, 543, 83, 2013 |
10 |
Orientation-dependent phase separation of GaAsSb epilayers grown by gas-source molecular-beam epitaxy Chen YR, Chou LC, Yang YJ, Lin HH Thin Solid Films, 520(13), 4486, 2012 |