검색결과 : 51건
| No. | Article |
|---|---|
| 1 |
Theoretical investigation of phase transition on GaAs(001)-c(4 x 4) surface Ishizaki H, Akiyama T, Nakamura K, Shiraishi K, Taguchi A, Ito T Applied Surface Science, 244(1-4), 186, 2005 |
| 2 |
Systematic theoretical investigations of adsorption behavior on the GaAs(001)-c(4 x 4) surfaces Ito T, Tsutsumida K, Nakamura K, Kangawa Y, Shiraishi K, Taguchi A, Kageshima H Applied Surface Science, 237(1-4), 194, 2004 |
| 3 |
Surface properties of chalcogen passivated GaAs(100) Kampen TU, Zahn DRT, Braun W, Gonzalez C, Benito I, Ortega J, Jurczyszyn L, Blanco JM, Perez R, Flores F Applied Surface Science, 212, 850, 2003 |
| 4 |
Fundamental growth processes in the molecular beam epitaxy of III-V compounds - an historical perspective Joyce BA Thin Solid Films, 367(1-2), 3, 2000 |
| 5 |
Surface roughness and oxide contents of gas-phase and solution-phase polysulfide passivation of III-V surfaces Choy WH, Kwok RWM, So BKL, Hui GKC, Chen YJ, Xu JB, Wong SP, Lau WM Journal of Vacuum Science & Technology A, 17(1), 93, 1999 |
| 6 |
Low-temperature chlorination of GaAs(100) Hung WH, Wu SL, Chang CC Journal of Physical Chemistry B, 102(7), 1141, 1998 |
| 7 |
Surface recombination kinetics at the GaAs/electrolyte interface via photoluminescence efficiency measurements Kauffman JF, Liu CS, Karl MW Journal of Physical Chemistry B, 102(35), 6766, 1998 |
| 8 |
Chemical and electrochemical passivation of PbSe thin layers grown by molecular beam epitaxy Gautier C, Breton G, Nouaoura M, Cambon M, Charar S, Averous M Journal of the Electrochemical Society, 145(2), 512, 1998 |
| 9 |
Growth of GaS on GaAs(100) surfaces using the [(Bu-t)GaS](4) molecular precursor in ultrahigh vacuum Yi SI, Chung CH, Weinberg WH Journal of Vacuum Science & Technology A, 16(3), 1650, 1998 |
| 10 |
Chemical and photochemical processes in sulfide passivation of GaAs(100) : In situ optical study and photoemission analysis Berkovits VL, Ulin VP, Paget D, Bonnet JE, L'vova TV, Chiaradia P, Lantratov VM Journal of Vacuum Science & Technology A, 16(4), 2528, 1998 |